Simulate the MEMS thick-resist physical lithography process, and use the physical simulation algorithm and physical model to accurately reflect the SU8 and other thick-resist lithography effects. ◆ Support the four-step simulation of image forming, exposure, post-baking, and development; ◆ Precise lighting model before and after exposure; ◆ Support multi-layer mask file layout settings; ◆ Support fine measurement of 3D display results.

精准的三维工艺物理模拟工具。 ◆ 模拟工艺流程生成的器件的三维模型,动画形式显示工艺过程； ◆ 支持绝大多数MEMS工艺仿真，包括：各向同性/异性淀积，各向同性/异性刻蚀，湿法刻蚀，键合，光刻以及CMOS工艺中的氧化/注入等； ◆ 高精度模式和快速模式两种仿真模式可选； ◆ Si DRIE和湿法各向异性刻蚀算法源自成熟的单工艺仿真算法模块，历经丰富的实践验证； ◆ 支持III-V族半导体(InP)等多种化合物半导体物理仿真工艺. ◆ 支持spray准各向同性湿法刻蚀工艺 ◆ 基于GPU大规模并行计算 ◆ 采用体素绘制技术，支持旋转、平移、缩放、剖面等功能 ◆ 支持按工艺分层显示，方便观察器件内部结构信息； ◆ 支持PPT、AVI、JPG等多种格式输出。

Powerful process demonstration tool based on 3D voxel manipulation. ◆ Display the technological process in the form of animation; ◆ Simulate the 3D model of the device after any process step; ◆ Support most MEMS process simulations, including: isotropic/anisotropic deposition, isotropic/anisotropic etching, wet etching, bonding, photolithography, and oxidation/implantation in CMOS processes; ◆ Using voxel graphics technology, more realistic demonstration of three-dimensional complex device structure; ◆ Using volume rendering technology, users can view the internal information of the device through functions such as rotation, translation, zoom, and section; ◆ Use geometric algorithms to simulate deposition and etching processes more realistically;

The advanced, automatic control-based unit etching simulation technology can obtain accurate <100>, <110> single crystal silicon wafer KOH and TMAH anisotropic etching simulation results, and can also be used for complex layout and long-term etching. ◆ Top, bottom and double-sided etching of wafers; ◆ Multiple cut-off layers and multiple etchings of different masks on a single wafer; ◆ Reflect the impact of misaligned masks, and compensation techniques; ◆ Predict the influence of etchant temperature, concentration and etching time on device shape; ◆ TMAH and KOH etching rate database, users can also customize the etching rate; ◆ To measure the effect of vertical etching in the case of coupled anisotropic etching; ◆ Three-dimensional graphics and cross-section visualization; ◆ Measure the distance and angle between any two points of the wafer after etching;

◆ Accurate wet etching process simulation based on atomic model; ◆ Integrate DRIE and multiple mask compounding process functions; ◆ Cellular automata and dynamic Monte Carlo model based on octree and parallel computing; ◆ Complete etching process database, user-oriented open interface; ◆ Can define and cut any high-index crystal plane; ◆ Accurate description of corrosion surface morphology; ◆ Compatible with IntelliMask layout file and Bmp mask file; ◆ Output FEM grid data; ◆ IntelliEtchG based on GPU massively parallel computing; ◆ Wagon Wheel Analyzer silicon etch rate extraction tool; ◆ Etch Rate Visualizer / CCA calibrator Silicon etch rate visualization and calibration tool; ◆ Wagon Wheel Analyzer II Quartz Etch Rate Extraction Tool;

The process flow of the device is created by combining materials and layouts, and can be output to the FabSim module to generate a 3D virtual model, which is output to the TEM module for analysis. ◆ Complete MEMS process flow, including deposition, photolithography, etching, bonding, electroplating and other processes. Users can add their own crafts; ◆ Support standard MEMS process, such as MUMPS, SCREAM, SUMMIT, LIGA, Bosch Surface Micromachining, etc. ◆ Users can create their own crafts; ◆ Anisotropic wet etch rate display and tuning tool for patterned silicon and quartz materials ◆ Support SOI material, support the synchronization of resistivity and sheet resistance parameters; ◆ Support the output of Excel format process flow sheet ◆ The 3D model of the device generated by simulating the process flow with FabSim; ◆ Combine the influence of TEM analysis on the device to achieve more accurate multi-physics simulation;

The most comprehensive thin-film material database and process optimization tool available today, providing a vital link between process parameters and device characteristics. ◆ Contains more than 70 kinds of MEMS film material properties commonly used based on real process, making the simulation results more accurate; ◆ Allow users to add and customize materials; ◆ Directly export material properties to TEM analysis module through IntelliFab module; ◆ Optimize the process;

Simulate the RIE/ICP (Bosch Process) process to clearly reflect how the processing process affects the product formation. ◆ Adjustable side scallops, roughness and period; ◆ The lag effect of RIE and DRIE; ◆ Simulate the shape and side angle of the final entity; ◆ Consider the effect of mask; ◆ Create structures with adjustable process parameters for specific sections; ◆ Support Footing effect simulation; ◆ Support process parameter calculation; ◆ DRIE etching rate and aspect ratio calibration tool;

It can perform thermal, electrostatic, mechanical, thermal-mechanical-electrical coupling, and fluid-structure coupling analysis in different types of static, dynamic, transient and frequency domains. ◆ Finite element and boundary element solvers; ◆ Compatible with ANSYS, PATRAN, IDEAS; ◆ Use IntelliFab module to generate finite element model or use 3DBuilder to generate 3D model of components; ◆ Define the stress gradient and add the Coriolis force to the cyclotron; ◆ Include the relationship between thermal conductivity, resistivity, thermal expansion coefficient, density and temperature; ◆ Contact analysis, piezoelectric, piezoresistive and packaging analysis; ◆ Accurate dynamic analysis of electromechanical coupling to realize dynamic electromechanical coupling simulation based on real 3D device structure; ◆ Piezoelectric transient and dynamic simulation include transient voltage differential input, transient charge density input and the influence of Squeeze Film; ◆ Eigenfrequency analysis; ◆ Capacitance matrix calculation; ◆ The complete finite element model can be obtained by a reduction method to a simplified model, which can be used for system level analysis. This reduction method is based on Arnoldi reduction method, Lagrangian mechanics and mode superposition; ◆ Macro model feature extraction, automatically generate N degrees of freedom system model. Completely record nonlinear dynamic behavior, including harmonic and sub-harmonic responses; ◆ Provide 32- and 64-bit solvers, support SMP multi-core parallel computing; ◆ Static calculation of thermoelectromotive force Seebeck effect; ◆ Static, frequency and dynamic analysis and calculation of magnetostrictive effect.

Customizable parametric analysis tools, from layout generation, 3D model meshing, boundary and load settings, to analysis and post-processing, to generate analysis reports. ◆ Unattended parametric analysis; ◆ Size parameterization; ◆ Load parameterization; ◆ Standard unit layout library; ◆ Customizable units and layouts; ◆ One-click 3D grid establishment; ◆ Automatic boundary and load addition; ◆ The final result report can extract the result under any specified parameter; ◆ It can generate a comparison chart of the results under different parameters;

Electromagnetic field analysis module ◆ MEMS accurate full wave analysis; ◆ Real deformation structure analysis; ◆ Adopt the internationally popular finite element analysis solver; ◆ Precise boundary condition settings; ◆ Automatic air filling; ◆ Powerful adaptive tetrahedron division; ◆ Rich electromagnetic material library; ◆ A choice of matrix equation solvers, including CG and GMRES; ◆ Support multi-core parallel computing; ◆ Extraction of S parameters; ◆ Extraction of impedance matrix; ◆ Three-dimensional display of electric field and magnetic field; ◆ Smith chart; ◆ Support other relevant industrial formats (such as ACIS text format); ◆ The data format is compatible with other modules of IntelliSuite;

Analysis of Microfluidics ◆ Microchannel flow; ◆ Electrically driven flow (electroosmosis, electrophoresis); ◆ Dielectrophoresis (two-dimensional electrophoresis); ◆ Ion-driven flow in electric field; ◆ Electrowetting (electric field droplet surface tension driven simulation), free surface flow; ◆ Define sliding boundary conditions to simulate plug flow; ◆ Mixing and separating flow of acid, alkali and weak electrolyte under the action of electric field; ◆ Convective heat transfer effect; ◆ Using block-fitted coordinates, it can accurately describe complex geometric models and solve the problem of moving boundaries;

Using the EDA Linker tool, the system macro model file can be converted into an HDL (hardware description language) file, and the generated HDL file can be used for simulation in IC software such as Cadence, thereby realizing MEMS-IC co-design simulation.

The innovative SME (System Model Extraction) can systematically analyze the dynamic characteristics of MEMS devices, extract device characteristic parameters, convert a large FEA model into an accurate N-DOF energy model, import it into the SYNPLE module for simulation, and finally Obtain results consistent with full FEA analysis while computing 1000 times faster;

The MEMS and nanotechnology system-level design tools applied to multiple fields and scales are epoch-making products for effective comprehensive design of devices and circuits. Combined with other IntelliSuite modules, many technical challenges in industry can be solved. ◆ A good extensibility framework, which can easily add new units; ◆ Flexible unit definition method, no need to learn a new language; ◆ No need to spend a lot of time to calculate the Jacobian determinant, and the calculation speed is significantly better than the traditional numerical method; ◆ Pre-built cell libraries containing analog, digital, hybrid digital-analog, mechanical, and MEMS components. and is constantly being updated; ◆ The mEFM (Multiple Surface Meshing) algorithm specially developed for inertial devices such as MEMS gyroscopes and accelerometers can efficiently and accurately analyze the characteristic parameters of complex comb structures, greatly improving computing efficiency; ◆ Based on the Jiles-Atherton model and the quadratic domain rotation model, considering the hysteresis effect of the changing magnetic field, a MEMS unit with magneto-mechanical coupling and magneto-piezoelectric coupling is developed;

Design tools dedicated to editing MEMS layouts. ◆ Multi-layer layout editing function; ◆ Boolean operations can be performed on the layout; ◆ Perfect combination of shape and topology; ◆ Automatically generate the optimal device structure layout; ◆ Can read files in BMP, JPG, PNG and other image formats; ◆ It can automatically generate a series of new units to the specified layer through the existing layer according to certain rules; ◆ Automatically simplify and cut polygons with too many vertices; ◆ Able to draw complex layouts such as ellipse, arc, irregular curved edge and sine curve; ◆ Parameter script editing function: changing device parameters can quickly and easily modify the device structure, greatly shortening the design time; ◆ Modify or create new parameter scripts; ◆ Create complex layouts using cell-based VBS scripts; ◆ Complete GDSII file conversion function; ◆ Compatible with industry mainstream file formats GDSII, MSK, DXF; ◆ Support DESIGN RULE CHECK; ◆ Supports various Boolean operations on the layout, which can easily create complex structures; ◆ Fully support CELL layered structure; ◆ Process preview of 3D structure; ◆ Provide Measurement and dimensioning tools, which can easily mark the layout.

A powerful tool for interactive editing of 3D models of devices. ◆ Cartesian coordinate and polar coordinate grid point to assist in creating the optimal model of the device; ◆ Snap to grid or snap point (including midpoint, intersection and split point, etc.); ◆ Input layout (GDS, DXF or VEC format) to optimize the model; ◆ Perform grid subdivision for specified parts, such as spider web, zipper and divergent; ◆ Compatible with ANSYS, ABAQUS, PATRAN, I-DEAS format; ◆ Can solve large-scale matrices; ◆ Easily modify the thickness and gap of the structure; ◆ Automatically verify grid quality and correctness; ◆ The model is directly generated from the 2D layout and divided into hexahedral meshes; ◆ Automatically correct disconnected grids (when the number of grids is small); ◆ Create a sloped grid.