AnisE

The advanced, automatic control-based unit etching simulation technology can obtain accurate <100>, <110> single crystal silicon wafer KOH and TMAH anisotropic etching simulation results, and can also be used for complex layout and long-term etching. ◆ Top, bottom and double-sided etching of wafers; ◆ Multiple cut-off layers and multiple etchings of different masks on a single wafer; ◆ Reflect the impact of misaligned masks, and compensation techniques; ◆ Predict the influence of etchant temperature, concentration and etching time on device shape; ◆ TMAH and KOH etching rate database, users can also customize the etching rate; ◆ To measure the effect of vertical etching in the case of coupled anisotropic etching; ◆ Three-dimensional graphics and cross-section visualization; ◆ Measure the distance and angle between any two points of the wafer after etching;

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The advanced, automatic control-based unit etching simulation technology can obtain accurate <100>, <110> single crystal silicon wafer KOH and TMAH anisotropic etching simulation results, and can also be used for complex layout and long-term etching.

◆ Top, bottom and double-sided etching of wafers;

◆ Multiple cut-off layers and multiple etchings of different masks on a single wafer;

◆ Reflect the impact of misaligned masks, and compensation techniques;

◆ Predict the influence of etchant temperature, concentration and etching time on device shape;

◆ TMAH and KOH etching rate database, users can also customize the etching rate;

◆ Determine the effect of vertical etching in the case of coupled anisotropic etching;

◆ Three-dimensional graphics and cross-section visualization;

◆ Measure the distance and angle between any two points of the wafer after etching;

Comparison between experiment(top) and simulation (bottom)

Wet etching is affected by temperature, etchant concentration and other parameters.

FabViewer

IntelliEtch

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