SME (System model extraction)
The innovative SME (System Model Extraction) can systematically analyze the dynamic characteristics of MEMS devices, extract device characteristic parameters, convert a large FEA model into an accurate N-DOF energy model, import it into the SYNPLE module for simulation, and finally Obtain results consistent with full FEA analysis while computing 1000 times faster;
IntelliSuite uses state-of-the-art model reduction techniques to automatically create compact system models from large finite element models. NDOF (N-degree-of-freedom) system models encompass coupledelectro-mechanical behavior including stress stiffening, electrostatic softening, packaging effects, fluidic and other sources of damping. These accurate compact models can be exported to VHDL, Verilog-A, SPICE,Matlab and other tools for full MEMS-ASIC co-simulation.
System Model Extraction (SME)
Schematic of A Single Mirror
Schematic of Mirror Array
MEMS Mirror TEM
System Schematic Design
3D View of Performance
Displacement delays of the mirrors on the matrix diagonal
Simulate the MEMS thick-resist physical lithography process, and use the physical simulation algorithm and physical model to accurately reflect the SU8 and other thick-resist lithography effects. ◆ Support the four-step simulation of image forming, exposure, post-baking, and development; ◆ Precise lighting model before and after exposure; ◆ Support multi-layer mask file layout settings; ◆ Support fine measurement of 3D display results.
精准的三维工艺物理模拟工具。 ◆ 模拟工艺流程生成的器件的三维模型,动画形式显示工艺过程； ◆ 支持绝大多数MEMS工艺仿真，包括：各向同性/异性淀积，各向同性/异性刻蚀，湿法刻蚀，键合，光刻以及CMOS工艺中的氧化/注入等； ◆ 高精度模式和快速模式两种仿真模式可选； ◆ Si DRIE和湿法各向异性刻蚀算法源自成熟的单工艺仿真算法模块，历经丰富的实践验证； ◆ 支持III-V族半导体(InP)等多种化合物半导体物理仿真工艺. ◆ 支持spray准各向同性湿法刻蚀工艺 ◆ 基于GPU大规模并行计算 ◆ 采用体素绘制技术，支持旋转、平移、缩放、剖面等功能 ◆ 支持按工艺分层显示，方便观察器件内部结构信息； ◆ 支持PPT、AVI、JPG等多种格式输出。
Powerful process demonstration tool based on 3D voxel manipulation. ◆ Display the technological process in the form of animation; ◆ Simulate the 3D model of the device after any process step; ◆ Support most MEMS process simulations, including: isotropic/anisotropic deposition, isotropic/anisotropic etching, wet etching, bonding, photolithography, and oxidation/implantation in CMOS processes; ◆ Using voxel graphics technology, more realistic demonstration of three-dimensional complex device structure; ◆ Using volume rendering technology, users can view the internal information of the device through functions such as rotation, translation, zoom, and section; ◆ Use geometric algorithms to simulate deposition and etching processes more realistically;
The advanced, automatic control-based unit etching simulation technology can obtain accurate <100>, <110> single crystal silicon wafer KOH and TMAH anisotropic etching simulation results, and can also be used for complex layout and long-term etching. ◆ Top, bottom and double-sided etching of wafers; ◆ Multiple cut-off layers and multiple etchings of different masks on a single wafer; ◆ Reflect the impact of misaligned masks, and compensation techniques; ◆ Predict the influence of etchant temperature, concentration and etching time on device shape; ◆ TMAH and KOH etching rate database, users can also customize the etching rate; ◆ To measure the effect of vertical etching in the case of coupled anisotropic etching; ◆ Three-dimensional graphics and cross-section visualization; ◆ Measure the distance and angle between any two points of the wafer after etching;
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