Accurate 3D process physics simulation tool.
◆ Simulate the three-dimensional model of the device generated by the technological process, and display the technological process in the form of animation;
◆ Support most MEMS process simulations, including: isotropic/anisotropic deposition, isotropic/anisotropic etching, wet etching, bonding, photolithography, and oxidation/implantation in CMOS processes;
◆ There are two simulation modes: high precision mode and fast mode;
◆ Si DRIE and wet anisotropic etching algorithms are derived from mature single-process simulation algorithm modules and have undergone extensive practical verification;
◆ Supports a variety of compound semiconductor physical simulation processes such as III-V semiconductors (InP).
◆ Support spray quasi-isotropic wet etching process
◆ Massively parallel computing based on GPU
◆ Adopt voxel rendering technology, support functions such as rotation, translation, zoom, section, etc.
◆ Support layered display by process, which is convenient to observe the internal structure information of the device;
◆ Support PPT, AVI, JPG and other formats for output.
FabSim™ - Rapid Process Simulation
FabSimTM enables users to quickly build realistic physical models rather than geometric models created using traditional methods.
By systematically building prototypes in IntelliSuite, you can quickly identify process defects even before entering the factory, ultimately saving time and money. Process steps combined with layout geometry can be used to build the final virtual model.
3D lithography physical simulation
3D Physical Simulation with Calibration
high index etch
Virtual Fabrication with FabSim
Wet Etching process in FabSim
DRIE process in FabSim
GPU acceleration level set advance algorithm
Process simulation at wafer level
The process simulation results can directly generate
the finite element model for device performance analysis
◆ Si DRIE和湿法各向异性刻蚀算法源自成熟的单工艺仿真算法模块，历经丰富的实践验证;
Simulate the MEMS thick-resist physical lithography process, and use the physical simulation algorithm and physical model to accurately reflect the SU8 and other thick-resist lithography effects. ◆ Support the four-step simulation of image forming, exposure, post-baking, and development; ◆ Precise lighting model before and after exposure; ◆ Support multi-layer mask file layout settings; ◆ Support fine measurement of 3D display results.
精准的三维工艺物理模拟工具。 ◆ 模拟工艺流程生成的器件的三维模型,动画形式显示工艺过程； ◆ 支持绝大多数MEMS工艺仿真，包括：各向同性/异性淀积，各向同性/异性刻蚀，湿法刻蚀，键合，光刻以及CMOS工艺中的氧化/注入等； ◆ 高精度模式和快速模式两种仿真模式可选； ◆ Si DRIE和湿法各向异性刻蚀算法源自成熟的单工艺仿真算法模块，历经丰富的实践验证； ◆ 支持III-V族半导体(InP)等多种化合物半导体物理仿真工艺. ◆ 支持spray准各向同性湿法刻蚀工艺 ◆ 基于GPU大规模并行计算 ◆ 采用体素绘制技术，支持旋转、平移、缩放、剖面等功能 ◆ 支持按工艺分层显示，方便观察器件内部结构信息； ◆ 支持PPT、AVI、JPG等多种格式输出。
Powerful process demonstration tool based on 3D voxel manipulation. ◆ Display the technological process in the form of animation; ◆ Simulate the 3D model of the device after any process step; ◆ Support most MEMS process simulations, including: isotropic/anisotropic deposition, isotropic/anisotropic etching, wet etching, bonding, photolithography, and oxidation/implantation in CMOS processes; ◆ Using voxel graphics technology, more realistic demonstration of three-dimensional complex device structure; ◆ Using volume rendering technology, users can view the internal information of the device through functions such as rotation, translation, zoom, and section; ◆ Use geometric algorithms to simulate deposition and etching processes more realistically;
The advanced, automatic control-based unit etching simulation technology can obtain accurate <100>, <110> single crystal silicon wafer KOH and TMAH anisotropic etching simulation results, and can also be used for complex layout and long-term etching. ◆ Top, bottom and double-sided etching of wafers; ◆ Multiple cut-off layers and multiple etchings of different masks on a single wafer; ◆ Reflect the impact of misaligned masks, and compensation techniques; ◆ Predict the influence of etchant temperature, concentration and etching time on device shape; ◆ TMAH and KOH etching rate database, users can also customize the etching rate; ◆ To measure the effect of vertical etching in the case of coupled anisotropic etching; ◆ Three-dimensional graphics and cross-section visualization; ◆ Measure the distance and angle between any two points of the wafer after etching;
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